CHM02N6GPAGP MOSFET

CHM02N6GPAGP CHM02N6GPAGP

CHM02N6GPAGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM02N6GPAGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1.9 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 11 nS
  • Maximum Drain-Source On-State Resistance: 5.5 Ohm
  • Total Gate Charge: 6.7 nC
  • Maximum Power Dissipation: 48 W
  • Package: DPAK