CHM09N6NGP MOSFET

CHM09N6NGP CHM09N6NGP

CHM09N6NGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM09N6NGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 9 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 26 nS
  • Maximum Drain-Source On-State Resistance: 1.2 Ohm
  • Total Gate Charge: 73 nC
  • Maximum Power Dissipation: 156 W
  • Package: D2PAK