CHM10N4NGP MOSFET

CHM10N4NGP CHM10N4NGP

CHM10N4NGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM10N4NGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 450 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 10 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 27 nS
  • Maximum Drain-Source On-State Resistance: 0.7 Ohm
  • Total Gate Charge: 48 nC
  • Maximum Power Dissipation: 125 W
  • Package: D2PAK