CHM12N10PAGP MOSFET

CHM12N10PAGP CHM12N10PAGP

CHM12N10PAGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM12N10PAGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 11 A
  • Drain-Source Capacitance: 90 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7 nS
  • Maximum Drain-Source On-State Resistance: 0.18 Ohm
  • Total Gate Charge: 8 nC
  • Maximum Power Dissipation: 43 W
  • Package: TO-252