CHM12P10NGP MOSFET

CHM12P10NGP CHM12P10NGP

CHM12P10NGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM12P10NGP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 11 A
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 12 nS
  • Maximum Drain-Source On-State Resistance: 0.315 Ohm
  • Total Gate Charge: 15.6 nC
  • Maximum Power Dissipation: 75 W
  • Package: D2PAK