CHM4435BJGP MOSFET

CHM4435BJGP CHM4435BJGP

CHM4435BJGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM4435BJGP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 410 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.02 Ohm
  • Total Gate Charge: 31.4 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SO-8