CHM5813ESQ2GP MOSFET

CHM5813ESQ2GP CHM5813ESQ2GP

CHM5813ESQ2GP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM5813ESQ2GP
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: M5813ES
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 624 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 0.02 Ohm
  • Total Gate Charge: 35 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: DFN3X2