CHM6060RPAGP MOSFET

CHM6060RPAGP CHM6060RPAGP

CHM6060RPAGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM6060RPAGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 30 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 250 nS
  • Maximum Drain-Source On-State Resistance: 0.025 Ohm
  • Total Gate Charge: 36 nC
  • Maximum Power Dissipation: 50 W
  • Package: TO-252