CHM630PAGP MOSFET

CHM630PAGP CHM630PAGP

CHM630PAGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM630PAGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 7.8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 80 nS
  • Maximum Drain-Source On-State Resistance: 0.36 Ohm
  • Total Gate Charge: 27 nC
  • Maximum Power Dissipation: 50 W
  • Package: TO-252