CHM640NGP MOSFET

CHM640NGP CHM640NGP

CHM640NGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM640NGP
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 18 A
  • Drain-Source Capacitance: 355 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5 nS
  • Maximum Drain-Source On-State Resistance: 0.15 Ohm
  • Total Gate Charge: 44 nC
  • Maximum Power Dissipation: 120 W
  • Package: D2PAK