CHM6503GP MOSFET

CHM6503GP CHM6503GP

CHM6503GP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM6503GP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.2 V
  • Maximum Drain Current: 3.6 A
  • Drain-Source Capacitance: 115 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 110 nS
  • Maximum Drain-Source On-State Resistance: 0.05 Ohm
  • Total Gate Charge: 10.8 nC
  • Maximum Power Dissipation: 1 W
  • Package: SOT-346