CHM6601JGP MOSFET

CHM6601JGP CHM6601JGP

CHM6601JGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM6601JGP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 4.3 A
  • Drain-Source Capacitance: 110 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 6 nS
  • Maximum Drain-Source On-State Resistance: 0.086 Ohm
  • Total Gate Charge: 18.8 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SO-8