CHM6601PAGP MOSFET

CHM6601PAGP CHM6601PAGP

CHM6601PAGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM6601PAGP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 16 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8 nS
  • Maximum Drain-Source On-State Resistance: 0.086 Ohm
  • Total Gate Charge: 19.2 nC
  • Maximum Power Dissipation: 42 W
  • Package: TO-252