CHM6607JGP MOSFET

CHM6607JGP CHM6607JGP

CHM6607JGP MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CHM6607JGP
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3 V
  • Maximum Drain Current: 3.8 A
  • Drain-Source Capacitance: 115 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7 nS
  • Maximum Drain-Source On-State Resistance: 0.086 Ohm
  • Total Gate Charge: 19 nC
  • Maximum Power Dissipation: 2 W
  • Package: SO-8