CS1010EA8 MOSFET
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CS1010EA8 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: CS1010EA8
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 60 V
- Maximum Gate-Source Voltage: 120 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 120 A
- Drain-Source Capacitance: 740 pF
- Maximum Operating Junction Temperature: 175 °C
- Rise Time: 82 nS
- Maximum Drain-Source On-State Resistance: 0.012 Ohm
- Total Gate Charge: 75 nC
- Maximum Power Dissipation: 230 W
- Package: TO-220AB