CS10J60A4-G MOSFET

CS10J60A4-G CS10J60A4-G

CS10J60A4-G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS10J60A4-G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 450 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 29.5 nS
  • Maximum Drain-Source On-State Resistance: 0.55 Ohm
  • Total Gate Charge: 17 nC
  • Maximum Power Dissipation: 70 W
  • Package: TO-252