CS10N65FA9HD MOSFET

CS10N65FA9HD CS10N65FA9HD

CS10N65FA9HD MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS10N65FA9HD
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 155 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 0.85 Ohm
  • Total Gate Charge: 39 nC
  • Maximum Power Dissipation: 50 W
  • Package: TO-220F