CS10N80FA9D MOSFET

CS10N80FA9D CS10N80FA9D

CS10N80FA9D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS10N80FA9D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 800 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 200 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.9 Ohm
  • Total Gate Charge: 65 nC
  • Maximum Power Dissipation: 60 W
  • Package: TO-220F