CS12N60A8H MOSFET

CS12N60A8H CS12N60A8H

CS12N60A8H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS12N60A8H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 26 nS
  • Maximum Drain-Source On-State Resistance: 0.65 Ohm
  • Total Gate Charge: 46 nC
  • Maximum Power Dissipation: 140 W
  • Package: TO-220AB