CS12N60FA9HD MOSFET
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CS12N60FA9HD MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: CS12N60FA9HD
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 600 V
- Maximum Gate-Source Voltage: 30 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 12 A
- Drain-Source Capacitance: 187 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 19 nS
- Maximum Drain-Source On-State Resistance: 0.65 Ohm
- Total Gate Charge: 46 nC
- Maximum Power Dissipation: 55 W
- Package: TO-220F