CS12N65FA9H MOSFET

CS12N65FA9H CS12N65FA9H

CS12N65FA9H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS12N65FA9H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 12 A
  • Drain-Source Capacitance: 184 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18 nS
  • Maximum Drain-Source On-State Resistance: 0.7 Ohm
  • Total Gate Charge: 44 nC
  • Maximum Power Dissipation: 55 W
  • Package: TO-220F