CS16N60A8H MOSFET

CS16N60A8H CS16N60A8H

CS16N60A8H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS16N60A8H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 16 A
  • Drain-Source Capacitance: 18.5 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 52 nS
  • Maximum Drain-Source On-State Resistance: 0.5 Ohm
  • Total Gate Charge: 54 nC
  • Maximum Power Dissipation: 180 W
  • Package: TO-220AB