CS16N60A8H MOSFET


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CS16N60A8H MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: CS16N60A8H
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 600 V
- Maximum Gate-Source Voltage: 30 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 16 A
- Drain-Source Capacitance: 18.5 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 52 nS
- Maximum Drain-Source On-State Resistance: 0.5 Ohm
- Total Gate Charge: 54 nC
- Maximum Power Dissipation: 180 W
- Package: TO-220AB