CS1N50A1 MOSFET

CS1N50A1 CS1N50A1

CS1N50A1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS1N50A1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 11 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7 nS
  • Maximum Drain-Source On-State Resistance: 11 Ohm
  • Total Gate Charge: 4 nC
  • Maximum Power Dissipation: 3 W
  • Package: TO-92