CS1N60A3H MOSFET

CS1N60A3H CS1N60A3H
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CS1N60A3H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS1N60A3H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 0.8 A
  • Drain-Source Capacitance: 10.7 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 6.3 nS
  • Maximum Drain-Source On-State Resistance: 15 Ohm
  • Total Gate Charge: 4 nC
  • Maximum Power Dissipation: 25 W
  • Package: TO-251

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