CS1N60B1R MOSFET

CS1N60B1R CS1N60B1R

CS1N60B1R MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS1N60B1R
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 0.9 A
  • Drain-Source Capacitance: 18 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5 nS
  • Maximum Drain-Source On-State Resistance: 8 Ohm
  • Total Gate Charge: 5.2 nC
  • Maximum Power Dissipation: 3 W
  • Package: TO-92