CS1N60C1H MOSFET

CS1N60C1H CS1N60C1H

CS1N60C1H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS1N60C1H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 25 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 27 nS
  • Maximum Drain-Source On-State Resistance: 10.5 Ohm
  • Total Gate Charge: 6 nC
  • Maximum Power Dissipation: 3 W
  • Package: TO-92