CS1N65B1 MOSFET

CS1N65B1 CS1N65B1

CS1N65B1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS1N65B1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 0.9 A
  • Drain-Source Capacitance: 17 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 4.5 nS
  • Maximum Drain-Source On-State Resistance: 9.5 Ohm
  • Total Gate Charge: 5.3 nC
  • Maximum Power Dissipation: 3 W
  • Package: TO-92