CS1N80A4H MOSFET

CS1N80A4H CS1N80A4H

CS1N80A4H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS1N80A4H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 800 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 16 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 4.6 nS
  • Maximum Drain-Source On-State Resistance: 15 Ohm
  • Total Gate Charge: 6.7 nC
  • Maximum Power Dissipation: 30 W
  • Package: TO-252