CS2N60A3H MOSFET

CS2N60A3H CS2N60A3H

CS2N60A3H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS2N60A3H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 31 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5 nS
  • Maximum Drain-Source On-State Resistance: 4.5 Ohm
  • Total Gate Charge: 8.5 nC
  • Maximum Power Dissipation: 35 W
  • Package: TO-251