CS2N60I MOSFET

CS2N60I CS2N60I

CS2N60I MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS2N60I
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 35 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 23 nS
  • Maximum Drain-Source On-State Resistance: 5 Ohm
  • Maximum Power Dissipation: 45 W
  • Package: TO-251