CS3N50B4HY MOSFET


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CS3N50B4HY MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: CS3N50B4HY
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 500 V
- Maximum Gate-Source Voltage: 30 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 3 A
- Drain-Source Capacitance: 37 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 11 nS
- Maximum Drain-Source On-State Resistance: 3 Ohm
- Total Gate Charge: 8.5 nC
- Maximum Power Dissipation: 35 W
- Package: TO-252