CS3N65A4H-G MOSFET

CS3N65A4H-G CS3N65A4H-G

CS3N65A4H-G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS3N65A4H-G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 3 A
  • Drain-Source Capacitance: 39 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 6 nS
  • Maximum Drain-Source On-State Resistance: 3.5 Ohm
  • Total Gate Charge: 11 nC
  • Maximum Power Dissipation: 55 W
  • Package: TO-252

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