CS4J60B3-G MOSFET

CS4J60B3-G CS4J60B3-G

CS4J60B3-G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS4J60B3-G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 3.9 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 128 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 2.5 Ohm
  • Total Gate Charge: 11.2 nC
  • Maximum Power Dissipation: 45 W
  • Package: TO-251