CS4N60FA9HD MOSFET

CS4N60FA9HD CS4N60FA9HD

CS4N60FA9HD MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS4N60FA9HD
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 55 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 6.5 nS
  • Maximum Drain-Source On-State Resistance: 2.3 Ohm
  • Total Gate Charge: 14.5 nC
  • Maximum Power Dissipation: 30 W
  • Package: TO-220F