CS640FA9H MOSFET

CS640FA9H CS640FA9H

CS640FA9H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS640FA9H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 18 A
  • Drain-Source Capacitance: 180 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 33 nS
  • Maximum Drain-Source On-State Resistance: 0.18 Ohm
  • Total Gate Charge: 24 nC
  • Maximum Power Dissipation: 55 W
  • Package: TO-220F