CS6N60A4D MOSFET

CS6N60A4D CS6N60A4D

CS6N60A4D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS6N60A4D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 6 A
  • Drain-Source Capacitance: 74 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 14 nS
  • Maximum Drain-Source On-State Resistance: 1.7 Ohm
  • Total Gate Charge: 17 nC
  • Maximum Power Dissipation: 85 W
  • Package: TO-252