CS8N25A4H MOSFET

CS8N25A4H CS8N25A4H

CS8N25A4H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS8N25A4H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 250 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 8 A
  • Drain-Source Capacitance: 80 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 12 nS
  • Maximum Drain-Source On-State Resistance: 0.47 Ohm
  • Total Gate Charge: 12 nC
  • Maximum Power Dissipation: 83 W
  • Package: TO-252