CS8N65A8H MOSFET

CS8N65A8H CS8N65A8H

CS8N65A8H MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CS8N65A8H
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 8 A
  • Drain-Source Capacitance: 108 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 15 nS
  • Maximum Drain-Source On-State Resistance: 1.3 Ohm
  • Total Gate Charge: 28 nC
  • Maximum Power Dissipation: 110 W
  • Package: TO-220AB