CSD16323Q3 MOSFET

CSD16323Q3 CSD16323Q3
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CSD16323Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD16323Q3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 25 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1.4 V
  • Maximum Drain Current: 21 A
  • Drain-Source Capacitance: 740 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 15 nS
  • Maximum Drain-Source On-State Resistance: 0.0045 Ohm
  • Total Gate Charge: 6.2 nC
  • Maximum Power Dissipation: 3 W
  • Package: SON3.3x3.3_SuperSO8

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