CSD16406Q3 MOSFET

CSD16406Q3 CSD16406Q3

CSD16406Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD16406Q3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 25 V
  • Maximum Gate-Source Voltage: 16 V
  • Maximum Gate-Threshold Voltage: 2.2 V
  • Maximum Drain Current: 19 A
  • Drain-Source Capacitance: 680 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 12.9 nS
  • Maximum Drain-Source On-State Resistance: 0.0053 Ohm
  • Total Gate Charge: 5.8 nC
  • Maximum Power Dissipation: 2.7 W
  • Package: SON3.3x3.3_SuperSO8