CSD16409Q3 MOSFET

CSD16409Q3 CSD16409Q3

CSD16409Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD16409Q3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 25 V
  • Maximum Gate-Source Voltage: 16 V
  • Maximum Gate-Threshold Voltage: 2.3 V
  • Maximum Drain Current: 15 A
  • Drain-Source Capacitance: 480 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 0.0082 Ohm
  • Total Gate Charge: 4 nC
  • Maximum Power Dissipation: 2.6 W
  • Package: QFN3.3X3.3