CSD16409Q3 MOSFET


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CSD16409Q3 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: CSD16409Q3
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 25 V
- Maximum Gate-Source Voltage: 16 V
- Maximum Gate-Threshold Voltage: 2.3 V
- Maximum Drain Current: 15 A
- Drain-Source Capacitance: 480 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 30 nS
- Maximum Drain-Source On-State Resistance: 0.0082 Ohm
- Total Gate Charge: 4 nC
- Maximum Power Dissipation: 2.6 W
- Package: QFN3.3X3.3