CSD16411Q3 MOSFET

CSD16411Q3 CSD16411Q3
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CSD16411Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD16411Q3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 25 V
  • Maximum Gate-Source Voltage: 16 V
  • Maximum Gate-Threshold Voltage: 2.3 V
  • Maximum Drain Current: 14 A
  • Drain-Source Capacitance: 330 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 18 nS
  • Maximum Drain-Source On-State Resistance: 0.01 Ohm
  • Total Gate Charge: 2.9 nC
  • Maximum Power Dissipation: 2.7 W
  • Package: QFN3X3

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