CSD16556Q5B MOSFET

CSD16556Q5B CSD16556Q5B
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CSD16556Q5B MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD16556Q5B
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 25 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 1.7 V
  • Maximum Drain Current: 40 A
  • Drain-Source Capacitance: 2270 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 34 nS
  • Maximum Drain-Source On-State Resistance: 0.00107 Ohm
  • Total Gate Charge: 36 nC
  • Maximum Power Dissipation: 3.2 W
  • Package: SON5x6

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