CSD17309Q3 MOSFET

CSD17309Q3 CSD17309Q3
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CSD17309Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD17309Q3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1.7 V
  • Maximum Drain Current: 20 A
  • Drain-Source Capacitance: 580 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 9.9 nS
  • Maximum Drain-Source On-State Resistance: 0.0054 Ohm
  • Total Gate Charge: 7.5 nC
  • Maximum Power Dissipation: 2.8 W
  • Package: SON3.3x3.3_SuperSO8

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