CSD17313Q2Q1 MOSFET

CSD17313Q2Q1 CSD17313Q2Q1

CSD17313Q2Q1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD17313Q2Q1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1.8 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 140 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 3.9 nS
  • Maximum Drain-Source On-State Resistance: 0.03 Ohm
  • Total Gate Charge: 2.1 nC
  • Maximum Power Dissipation: 2.4 W
  • Package: SON2x2_SuperSO8