CSD17556Q5B MOSFET

CSD17556Q5B CSD17556Q5B
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CSD17556Q5B MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD17556Q5B
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 1.65 V
  • Maximum Drain Current: 34 A
  • Drain-Source Capacitance: 1770 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 26 nS
  • Maximum Drain-Source On-State Resistance: 0.0014 Ohm
  • Total Gate Charge: 30 nC
  • Maximum Power Dissipation: 3.1 W
  • Package: SON5x6

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