CSD19506KCS MOSFET

CSD19506KCS CSD19506KCS

CSD19506KCS MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19506KCS
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 80 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.2 V
  • Maximum Drain Current: 150 A
  • Drain-Source Capacitance: 2260 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 11 nS
  • Maximum Drain-Source On-State Resistance: 0.0023 Ohm
  • Total Gate Charge: 120 nC
  • Maximum Power Dissipation: 375 W
  • Package: TO-220