CSD19531KCS MOSFET

CSD19531KCS CSD19531KCS
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CSD19531KCS MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19531KCS
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.3 V
  • Maximum Drain Current: 100 A
  • Drain-Source Capacitance: 560 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 7.2 nS
  • Maximum Drain-Source On-State Resistance: 0.0077 Ohm
  • Total Gate Charge: 38 nC
  • Maximum Power Dissipation: 214 W
  • Package: TO-220

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