CSD19531Q5A MOSFET

CSD19531Q5A CSD19531Q5A
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CSD19531Q5A MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19531Q5A
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.3 V
  • Maximum Drain Current: 16 A
  • Drain-Source Capacitance: 560 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5.8 nS
  • Maximum Drain-Source On-State Resistance: 0.0064 Ohm
  • Total Gate Charge: 37 nC
  • Maximum Power Dissipation: 3.3 W
  • Package: SON5x6

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