CSD19532KTT MOSFET

CSD19532KTT CSD19532KTT

CSD19532KTT MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19532KTT
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.2 V
  • Maximum Drain Current: 136 A
  • Drain-Source Capacitance: 674 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 3 nS
  • Maximum Drain-Source On-State Resistance: 0.0056 Ohm
  • Total Gate Charge: 44 nC
  • Maximum Power Dissipation: 250 W
  • Package: D2PAK